• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
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    • 专利摘要:
    LIGHT-EMITTING ELEMENT. The present invention relates to a light-emitting semiconductor element that has a first electrode and a second electrode provided in a semiconductor layer, the first electrode has a first external connector and a first extended portion and a second extended portion extending from of the first external connector, the second electrode has a second external connector, and a third extended portion, a fourth extended portion, and a fifth extended portion that extend from the second external connector, the third extended portion extends along the the first extended portion and more distant than the first extended portion, the fourth extended portion extends along the second extended portion and further away than the second extended portion, and the fifth extended portion extends an area between the third extended portion and the fourth portion extended to the first side of the external connector, and the fifth portion extended is either on a line connecting a point on the pr first portion extended in the position closest to the second external connector and a point in the second portion extended in the position closest to the second external connector, or closer (...).
    公开号:BR112013001623B1
    申请号:R112013001623-0
    申请日:2011-07-19
    公开日:2021-02-02
    发明作者:Keiji Emura
    申请人:Nichia Corporation；
    IPC主号:
    专利说明:

    CROSS REFERENCE TO RELATED REQUESTS
    [0001] This order claims priority for Japanese Orders No. 2010-165411 and 2010-192077 filed in Japan on July 23 and August 30, 2010. The full description of Japanese Orders No. 2010-165411 and 2010-192077 is incorporated by reference here. FIELD OF THE INVENTION
    [0002] This invention relates to a light-emitting element, and more particularly to an electrode structure of the light-emitting element. BACKGROUND INFORMATION
    [0003] Various types of light-emitting elements have been developed in the past, in order to allow light to be emitted in a uniform way. For example, there is an electrode structure for a light-emitting element, where either the p-side electrode or the n-side electrode is disposed in the center of the upper face of the light-emitting element, and the other electrode is disposed in in order to surround the periphery of the first electrode (see patent literature 1: JP2002-319704-A).
    [0004] However, when the electrode structure such as this is effectively put to use, it inevitably turns out to be a polarization in the current density distribution between the side electrode and side electrode n, the direct voltage (Vf) is higher , and this structure is unsuitable for obtaining uniform light emission.
    [0005] The present invention was designed taking into account this situation, and it is an object of the same to provide a light emitting element with which there is little polarization in the distribution of the current density between the electrodes. SUMMARY OF THE INVENTION
    [0006] A light-emitting element [1] of the present invention has a first electrode and a second electrode provided in a semiconductor layer; the first electrode has a first external connector and a first extended portion and a second extended portion that extend from the first external connector, the second electrode has a second external connector, and a third extended portion, a fourth extended portion, and a fifth extended portion extending from the second outer connector, the third extended portion extends along the first extended portion and further away than the first extended portion, the fourth extended portion extends along the second extended portion and farther than the second extended portion, and the fifth extended portion extends from an area between the third extended portion and the fourth extended portion to the first side of the outer connector, and the fifth extended portion is either on a line connecting a point on the first portion extended at the position closest to the second external connector and a point on the second portion extended at the position closest to the second external connector, or closer to the side of the second external connector than the line.
    [0007] With the relative light-emitting element of the present invention, the distribution of the current density between the electrodes can be made more uniform. BRIEF DESCRIPTION OF THE DRAWINGS
    [0008] FIG. 1 is a plan view showing schematically the light-emitting element that belongs to a first embodiment; FIG. 2 is a cross-sectional view of line A-A 'of Fig. 1 which schematically illustrates the light-emitting element that belongs to a first embodiment; FIG. 3 is a plan view showing schematically the light-emitting element that belongs to a second embodiment; FIG. 4 is a diagram related to the light-emitting element that belongs to a comparative example 1, where (a) is a plan view that schematically illustrates the light-emitting element that belongs to comparative example 1, and (b) is a view plane of the current density distribution of the light emitting element belonging to comparative example 1; FIG. 5 is a diagram related to the light-emitting element that belongs to a comparative example 2, where (a) is a plan view that schematically illustrates the light-emitting element that belongs to comparative example 2, and (b) is a view plane of the current density distribution of the light emitting element belonging to comparative example 2; FIG. 6 is a diagram related to the light-emitting element that belongs to a comparative example 3, where (a) is a plan view that schematically illustrates the light-emitting element that belongs to comparative example 3, and (b) is a view plane of the current density distribution of the light emitting element belonging to comparative example 2; FIG. 7 is a diagram related to the light-emitting element that belongs to a working example 1, where (a) is a plan view that schematically illustrates the light-emitting element that belongs to working example 1, and (b) is a plan view of the current density distribution of the light-emitting element belonging to working example 1; FIG. 8 is a diagram related to the light-emitting element that belongs to a working example 2, where (a) is a plan view that schematically illustrates the light-emitting element that belongs to working example 2, and (b) is a plan view of the current density distribution of the light emitting element belonging to working example 2; FIG. 9 is a diagram related to the light-emitting element that belongs to a working example 3, where (a) is a plan view that schematically illustrates the light-emitting element that belongs to working example 3, and (b) is a plan view of the current density distribution of the light emitting element belonging to working example 3; FIG. 10 is a diagram related to the light-emitting element that belongs to a working example 4, where (a) is a plan view that schematically illustrates the light-emitting element that belongs to working example 4, and (b) is a plan view of the current density distribution of the light-emitting element belonging to working example 4; FIG. 11 is a graph showing the results of the simulation of the direct voltage (Vf) and the relative values of the current density distribution width of the light-emitting elements that belong to the comparative examples and working examples, (b) is a graph comparing only the relative values of current density distribution width in Comparative Example 3 and Working Examples, from 1 to 3, shown in (a); FIG. 12 is a diagram related to the light-emitting element belonging to a third modality, in which (a) is a plan view that schematically illustrates the light-emitting element belonging to the third modality, and (b) is a flat view of the current density distribution of the light emitting element that belongs to the third modality. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
    [0009] The modalities of the present invention will be described below, with reference to the Figures. The size, position relationships, and so on of the members illustrated in the different diagrams can be exaggerated in order to make the description clearer. In addition, in the following description, members who are the same or equivalent are indicated with the same name and reference number and a detailed description of them will be omitted as appropriate. First Mode
    [00010] FIG. 1 is a plan view that schematically illustrates the light-emitting element that belongs to a first embodiment, and Fig. 2 is a cross-sectional view of line AA 'of Fig. 1 that schematically illustrates the light-emitting element that belongs to a first modality.
    [00011] As shown in FIGS. 1 and 2, the light-emitting element 100 that belongs to a first embodiment has at least one substrate 10, a semiconductor layer 30 provided over the substrate 10, and a first electrode 50 and a second electrode 70 provided over the semiconductor layer 30.
    [00012] The first electrode 50 has a first external connector 52 and a first extended portion 54 and a second extended portion 56 that extend from the first external connector.
    [00013] The second electrode 70 has a second external connector 72, and a third extended portion 74, a fourth extended portion 76, and a fifth extended portion 78 that extend from the second external connector 72.
    [00014] The third extended portion 74 extends along the first extended portion 54 and further away than the first extended portion 54, and the fourth extended portion 76 extends along the second extended portion 56 and further away than the second extended portion 56. That is, the shortest distances from more than one point on the first extended portion 54 to the third extended portion 74 are the same, or the first extended portion 54 is arranged at regular intervals from the third extended portion 74 over a predetermined length. This also means that the shortest distances from more than one point from the second extended portion 56 to the fourth extended portion 76 are the same, or the second extended portion 56 is arranged at regular intervals from the fourth extended portion 76 with a length predetermined. In addition, the extensions are arranged so that the shortest distances from the first extended portion 54 to the third extended portion 74 and from the second extended portion 56 to the fourth extended portion 76 are the same.
    [00015] In general, a current flow is concentrated when extended portions of electrodes are close to each other, and a current does not flow when extended portions of electrodes are distant from each other. Therefore, the various distances between the extended portions cause uniform current density. Meanwhile, the aforementioned arrangement of the first to the fourth extended portions prevents uniform current density.
    [00016] The fifth extended portion 78 extends the area between the third extended portion 74 and the fourth extended portion 76 to the side of the first outer connector 52. The fifth extended portion 78 is either on a line L1 connecting a point on the first portion extended 54 in the position closest to the second external connector 72 and a point in the second extended portion 56 in the position closest to the second external connector 72, or more to the side of the second external connector 72 than the line L1.
    [00017] In this specification, "in" is the upward direction in FIG. 2, referring to the side on which the first electrode 50 and the second electrode 70 are provided with respect to the semiconductor layer 30.
    [00018] Therefore, a portion of the current flow that is concentrated between the first external connector 52 and the second external connector 72 can be distributed over the areas where the current tends to be lacking, for example, between the first extended portion 54 and the third extended portion 74, or between the second extended portion 56 and the fourth extended portion 76. Therefore, the distribution of current density between the electrodes can be made more uniform.
    [00019] More specifically, the light-emitting element 100 that belongs to this embodiment has a substantially rectangular shape in the top view, and a side semiconductor layer 32, an active layer 34, and a side semiconductor layer p 36 are arranged in that order of semiconductor layer 30 on substrate 10. A pair of positive and negative electrodes are provided in the semiconductor layer 30, and the first electrode 50 (side electrode n) which is electrically connected to side semiconductor layer n 32, and the second electrode 70 (side electrode p) which is electrically connected to the side semiconductor layer p 36 are provided.
    [00020] The first electrode 50 is provided on the surface of the side semiconductor layer 32 exposed when parts of the active layer 34 and the side semiconductor layer p 36 are removed. Meanwhile, the second electrode 70 is provided by contacting the surface of a translucent electrode 40 formed over substantially the entire upper surface of the lateral semiconductor layer p 36.
    [00021] In addition, the first electrode 50 and the second electrode 70, respectively, have external connectors 52 and 72 that are electrically connected to external circuits (not shown), and the plurality of extended portions 54, 56, 74, 76, and 78 extending from external connectors 52 and 72, respectively.
    [00022] In this modality, the external connector 52 of the first electrode (first external connector) and the external connector 72 of the second electrode (second external connector) are arranged opposite each other, with the semiconductor layer 30 in the middle, in the diagonal direction of the semiconductor layer 30, which has a substantially rectangular shape in the top view. The first outer connector 52 has the first extended portion 54 and a second extended portion 56, which extend to the side of the second outer connector 72. The first extended portion 54 and the second extended portion 56 are arranged in a substantially shaped pattern arc with the first external connector 52, in the middle in the top view.
    [00023] Meanwhile, the second external connector 72 has the third extended portion 74, the fourth extended portion 76, and the fifth extended portion 78 that extend to the side of the first external connector 52. The third extended portion 74 extends beyond the outside of the first extended portion 54 along the first extended portion 54. The fourth extended portion 76 extends beyond the outside of the second extended portion 56 along the second extended portion 56.
    [00024] The distance a1 from the second external connector 72, to a point on the first extended portion 54 in the position closest to the second external connector 72 (the distal end of the first extended portion) is preferably greater than the distance b1 between the first external connector 52 to a point on the third extended portion 74 in the position closest to the first external connector 52 (the distal end of the third extended portion), and the distance a2 from the second external connector 72, to a point on the second portion extended 56 in the position closest to the second outer connector 72 (the distal end of the second extended portion) is preferably greater than the distance b2 between the first outer connector 52 to a point in the fourth extended portion 76 in the position closest to the first external connector 52 (the distal end of the fourth portion extended).
    [00025] Consequently, the current flowing between the first extended portion 54 or the second extended portion 56 and the second outer connector 72 of the side electrode, where the current tends to be more concentrated in the peripheral region than in the first outer connector 52 of the side electrode n, can more easily spread between the first outer connector 52 of the side electrode n and the third extended portion 74 or fourth extended portion 76.
    [00026] The widths of the third extended portion 74 and the fourth extended portion 76 are preferably such that the widths on the side of the second outer connector 72 are greater than the widths on the distal end side, and in particular those of the portions opposite along the first extended portion 54 and the second extended portion 56. Therefore, the foil resistance on the side of the second outer connector 72 decreases, the current can more easily spread to the side of the distal end. In addition, the surface area of the electrodes in the semiconductor layer 30 can be reduced, instead of making the widths of the extended third portion 74 and the enlarged fourth part 76 uniform, so that there is less of a decrease in the extraction efficiency from light from the semiconductor layer 30.
    [00027] Furthermore, the fifth extended portion 78 in this embodiment extends in the area between the third extended portion 74 and the fourth portion 76 linearly extended to the first outer connector 52. The distal end of the fifth extended portion 78 is arranged more to the side of the second outer connector 72 than the L1 line that connects a point on the first extended portion 54 in the position closest to the second outer connector 72 (the distal end of the first extended portion) and a point on the second extended portion 56 in the position closest to the second outer connector 72 (the distal end of the second extended portion).
    [00028] Consequently, there is less excessive current concentration between the fifth extended portion 78 and the region bounded by the first outer connector 52, the first extended portion 54 and the second extended portion 56, and a portion of the restricted current may spread between the first extended portion 54 and the third extended portion 74, and between the second extended portion 56 and the fourth extended portion 76.
    [00029] Furthermore, the third extended portion 74 and the fourth extended portion 76 are preferably arranged opposite each other and so as to be substantially parallel to the first extended portion 54 and the second extended portion 56, respectively, and even more than preferably, the first extended portion 54 and the second extended portion 56 are arranged in the form of arcs, which are concentric with the third extended portion 74 and the extended portion fourth 76.
    [00030] Consequently, the current flowing between the first extended portion 54 and the third extended portion 74, and between the second extended portion 56 and the fourth extended portion 76 can be made more uniform. In particular, the use of a concentric arc shape minimizes the surface area over the semiconductor layer 30 that is accounted for with the electrodes, so that there is less of a decrease in the efficiency of light extraction from the semiconductor layer 30.
    [00031] Furthermore, in order from the center of these concentric arcs, on line L2 that joins the first extended portion 54 and the third extended portion 74, the distance c1 from the center of the concentric arcs to the first extended portion 54 is preferably the same or more than the distance d1 from the first extended portion 54 to the third extended portion 74, and in order from the center of these concentric arcs, on line L3 joining the second extended portion 56 and the fourth extended portion 76 , the distance c2 from the center of the concentric arcs to the second extended portion 56 is preferably equal to or greater than the distance d2 from the second extended portion 56 to the fourth extended portion 76.
    [00032] Consequently, the current flow that tends to concentrate between the first external connector 52 and the second external connector 72, and, in particular, near the center of the concentric arc, can even more easily spread between the first portion extended 54 and the extended third portion 74, and between the second extended portion 56 and the fourth extended portion 76.
    [00033] The first external connector 52, in this embodiment, is arranged within a region bounded by a line L4 that connects the distal ends of the third extended portion 74, the fourth extended portion 76, and the fifth extended portion 78 in the top view . That is, the first external connector 52 is bounded by lines L4 connecting the point on the third extended portion 74, the point on the fourth extended portion 76, and the point on the fifth extended portion 78 that are furthest from the second external connector 72.
    [00034] Consequently, the first external connector 52, in which the current flow tends to be relatively concentrated, is arranged in a region where the current tends to fail and the distance from the second external connector 72 is further apart, and this compensates for the lack of current.
    [00035] In this embodiment, there are two extended portions in addition to the first to fifth extended portions mentioned above 54, 56, 74, 76, and 78, namely, an extended sixth portion 80 and an extended seventh portion 82. The sixth extended portion 80 branches outwardly from the third extended portion 74 and extends to a corner adjacent to the corner where the second outer connector 72 is disposed. The seventh extended portion 82 branches outwardly from the fourth extended portion 76 and extends to a corner adjacent to the corner where the second outer connector 72 is disposed.
    [00036] Therefore, the current can also be spread to the corner of the semiconductor layer 30 where the external connectors 52 and 72 are not arranged and where the current tends to be lacking.
    [00037] With the light-emitting element 100 that belongs to the first modality and with the constitution discussed above, the current density distribution between the first electrode 50 and the second electrode 70 can be made more uniform. (Substrate)
    [00038] The substrate is a member mainly used for laminate semiconductor layers, and there are no particular restrictions on its size, thickness, etc., as long as it is a member on which a nitride semiconductor can be grown epitaxially. Examples of substrate materials include sapphire (Al2O3), spinel (MgAl2O4), and other such insulating substrates, and silicon carbide (SiC), ZnS, ZnO, silicon, GaAs, diamond, and oxide substrates that form reticular bonds with a nitride semiconductor, such as lithium niobate gauge and neodymium. (Semiconductor layer)
    [00039] The semiconductor layer is a member that serves as the light-emitting component in the light-emitting element, and consists of at least one n-type semiconductor layer, an active layer, and a p-type semiconductor layer. There are no particular restrictions on the type of semiconductor layer or material, but a gallium nitride semiconductor material such as InxAlyGai-x-yN (0 <X, 0 <Y, X + Y <1) can be used to advantage. (Electrodes)
    [00040] The electrodes are members for supplying current from the outside to the semiconductor layer, and include a first electrode and a second electrode, as a pair of positive and negative electrodes on the same side of the semiconductor layer. The first electrode and the second electrode are arranged opposite each other with the semiconductor layer in the middle, and in a first modality, the first electrode is the lateral electrode and the second electrode is the lateral electrode p, but this is not the only option, and the first electrode can be the side electrode and the second electrode is the side electrode n. The term "opposite" here means that two members are facing each other point by point, but it also encompasses the meaning facing each other plane by plane.
    [00041] Nickel, rhodium, chromium, gold, platinum, tungsten, titanium, aluminum or the like can be used as the material for these electrodes, but the use of a multilayer film comprising laminations of Ti / Pt / Au, Ti / Rh / Au, or similar, where order is preferable.
    [00042] In addition, the first electrode and the second electrode each comprise an external connector and an extended portion.
    [00043] The external connector is a pad electrode to be electrically connected to an external circuit, such as a portion connected with conductive wire or the like. The external connectors are preferably arranged more inwardly than the side on the side of the semiconductor layer, in the top view, and the direct voltage can be reduced by shortening the distance between the external connectors. There are no particular restrictions on the shape of the external connectors, but a circular shape is preferable in terms of facilitating the wired connection, for example. In addition, in a first embodiment, the external connector of the first electrode (first external connector) and the external connector of the second electrode (second external connector) are arranged in the diagonal direction of the semiconductor layer in the top view, but can also be arranged in two opposite lateral directions of face of the semiconductor layer.
    [00044] The extended portions are auxiliary electrodes to uniformly diffuse the current provided to the external connectors to the semiconductor layer.
    [00045] At least a first extended portion and a second extended portion are provided as extended portions for the first electrode, and each extends from the first external connector to the side of the second external connector. The shape of the first and second portions can be extended in an arc, linear, or any other shape that is desired, but the first and second extended portions are preferably arranged in symmetry with respect to a line connecting the first external connector and the second external connector.
    [00046] At least a third extended portion, a fourth extended portion, and a fifth extended portion are provided as extended portions of the second electrode, and each extends from the second outer connector to the side of the first outer connector.
    [00047] The third extended portion extending from the second outer connector extends outwardly beyond the first extended portion, that is, the side of the side of the semiconductor layer is extended along the first extended portion .
    [00048] The fourth extended portion is extended from the second outer connector to the opposite side from the third extended portion, and extends outwardly beyond the second extended portion (on the side side of the semiconductor layer) along of the second extended portion. ("Opposite side" here means the opposite side to a line connecting the first external connector and the second external connector).
    [00049] There are no particular restrictions on the shape of the extended fifth portion, but it is arranged, at least, on a line connecting a point on the first extended portion in the position closest to the second outer connector, and a point on the second portion extended in the position closest to the second external connector, or more to the side of the second external connector of this line. (Translucent electrode)
    [00050] A translucent electrode is provided over substantially the entire surface of the top face of the type p semiconductor layer, and is a member, which serves to direct the current provided from the side electrode p uniformly over the entire plane of the semiconductor layer of type p. The translucent electrode is arranged on the light-extracting side of the semiconductor element, so that a conductive oxide is preferably used as the material. A thin metal film can also be used as the translucent electrode, but since a conductive oxide has the best translucency of a thin metal film, the semiconductor element can be made into a light emitting element with greater emission efficiency. Examples of such oxides include conductive oxides, including at least one element chosen from zinc, indium, tin, and magnesium, and, more specifically, ZnO, In2O3, SnO2, ITO, and so on. Conductive oxides (especially ITO) can be used for special advantage, because they are a material that has high optical transmissivity of visible light (in the visible band), for example, 60% or more, 70% or more, 75% or more , or 80% or more, and has a relatively high dielectric constant. Second Mode
    [00051] FIG. 3 is a plan view showing schematically the light-emitting element that belongs to a second embodiment.
    [00052] The light-emitting element that belongs to a second modality has substantially the same structure as in the first modality, except that the shape of the extended electrode portion is different. Portions of the structure that are the same cannot be described again.
    [00053] A light-emitting element 200 that belongs to this embodiment comprises at least one substrate 10, a semiconductor layer 30, a first electrode 50, and a second electrode 70.
    [00054] The first electrode 50 and the second electrode 70 are arranged facing each other in the diagonal direction of the semiconductor layer 30, which has a substantially rectangular shape in the top view.
    [00055] The first electrode 50 has a first external connector 52 and a first extended portion 54 and the second extended portion 56 that extend from the first external connector 52. The first external connector 52 is disposed near the corner (inside) of the semiconductor layer 30. The first extended portion 54 extends substantially parallel to a side face 37a that forms the corner of the semiconductor layer 30, where the first outer connector 52 is disposed. The second extended portion 56 extends substantially parallel to the other side of face 37b which forms the corner of the semiconductor layer 30, where the first outer connector 52 is disposed.
    [00056] The second electrode 70 has a second external connector 72 and a third extended portion 74, a fourth extended portion 76, and a fifth extended portion 78 that extend from the second external connector 72.
    [00057] The second external connector 72 is disposed near the corner (inside) of the semiconductor layer 30.
    [00058] The third extended portion 74 extends substantially parallel to a side face 38a that forms the corner of the semiconductor layer 30, where the second outer connector 72 is arranged, and extends beyond the exterior of the first extended portion 54 substantially parallel to the first extended portion 54.
    [00059] The fourth extended portion 76 extends substantially parallel to the other side of face 38b which forms the corner of the semiconductor layer 30, where the second outer connector 72 is arranged, and extends beyond the outside of the second extended portion 56 substantially parallel to the second extended portion 56.
    [00060] The fifth extended portion 78 extends the area between the third extended portion 74 and the fourth portion 76 linearly extended to the first outer connector 52. The distal end of the fifth extended portion 78 is arranged more to the side of the second connector outer 72 than the L1 line joining the distal ends of the first extended portion 54 and the second extended portion 56.
    [00061] Consequently, there is less excessive current concentration between the extended fifth part 78 and the region bounded by the first extended portion 54 and the second extended portion 56, and a portion of the restricted current may spread between the first extended portion 54 and the third extended portion 74, and between the second extended portion 56 and the fourth extended portion 76.
    [00062] The distal ends of the first extended portion 54 and the second extended portion 56 of each curve to the side of the second outer connector 72, and the curved distal ends respectively extend substantially parallel to the side faces 38a and 38b that form the corner of the semiconductor layer 30 on which the second outer connector 72 is arranged.
    [00063] Therefore, the portions that are opposite and substantially parallel between the extended portions 54 and 56 of the first electrode and the extended portions 74 and 76 of the second electrode can be increased, so that the current can be spread more evenly. . Furthermore, since the third extended portion 74 and the fourth extended portion 76 are not arranged in the direction that the distal ends of the first extended portion 54 and the second extended portion 56 extend (i.e., they curve), this decreases the current concentration that occurs relatively easily between them.
    [00064] With the light-emitting element 200 that belongs to the second modality and with the constitution discussed above, the current density distribution between the first electrode 50 and the second electrode 70 can be made more uniform. Third Mode
    [00065] FIG. 12 is a diagram related to the light-emitting element belonging to a third modality, in which (a) is a plan view that schematically illustrates the light-emitting element belonging to the third modality, and (b) is a flat view of the current density distribution of the light emitting element that belongs to the third modality, with the bar on the right indicating the current density, which increases from bottom to top (as indicated by the darker shading).
    [00066] The light-emitting element that belongs to a third modality, which has a substantially rectangular shape in the top view, has substantially the same structure as in the first modality, except that the shape of the extended electrode portion is different. Portions of the structure that are the same cannot be described again.
    [00067] The light-emitting element 1000 that belongs to this modality comprises at least one substrate 1010, a semiconductor layer 1030, a first electrode 1050, and a second electrode 1070.
    [00068] The first electrode 1050 has at least a first outer connector 1052 and a first extended portion 1054 and a second extended portion 1056 that extends from the first outer connector 1052 and are provided so that their distal ends meet branch off.
    [00069] The second electrode 1070 has at least a second external connector 1072 and a third extended portion 1074, a fourth extended portion 1076, and a fifth extended portion 1078 extending from the second external connector 1072.
    [00070] The first external connector 1052 and the second external connector 1072 are arranged opposite each other in the longitudinal direction of the semiconductor layer 1030, which has a substantially rectangular shape, in a flat view (arranged on the opposite small sides of the semiconductor layer) .
    [00071] The third extended portion 1074 extends beyond the exterior of the first extended portion 1054 along the first extended portion 1054.
    [00072] The fourth extended portion 1076 extends beyond the outside of the second extended portion 1056 along the second extended portion 1056.
    [00073] The fifth extended portion 1078 extends the area between the third extended portion 1074, and the fourth extended portion 1076 to the side of the first external connector 1052. This fifth extended portion 1078 is on the side of the second external connector 1072 of a L1001 line connecting a point on the first extended portion 1054 in the closest position to the second outer connector 1072 (the distal end of the first extended portion) and a point where the second extended portion 1056 in the closest position to the second outer connector 1072 (the distal end of the second extended portion).
    [00074] In addition, the third extended portion 1074, and the fourth extended portion 1076 have a sixth extended portion 1080 and a seventh extended portion 1082 that branch outwardly and extend along the side faces of the semiconductor layer 1030 , in order to surround the first external connector 1052.
    [00075] The first external connector 1052 has an eighth extended portion 1094 and a ninth extended portion 1096 that extend in the short lateral direction of the semiconductor layer 1030, so that the current can be uniformly distributed throughout the entire semiconductor layer, the which has a substantially rectangular shape. In addition, the first external connector 1052 is preferably arranged within a region bounded by the lines connecting the distal ends of the third extended portion 1074, the fourth extended portion 1076, the sixth extended portion 1080, and the seventh extended portion 1082, which allows the current that tends to be concentrated in the first external connector 1030 to be spread in the surrounding area.
    [00076] The second external connector 1072 has an eleventh extended portion 1090 and an eleventh extended portion 1092. The eleventh extended portion 1090 and the eleventh extended portion 1092 extend to the corners of the semiconductor layer 1030 near the second external connector 1072 , which allows the current to spread to the corners of the semiconductor layer 1030 where the current tends to be lacking.
    [00077] With the light-emitting element 1000 that belongs to the third modality and with the constitution discussed above, the current density distribution between the first electrode 1050 and the second electrode 1070 can be more uniform, as shown in Fig. 12 ( B). Work Examples
    [00078] An experimental example that confirms the effect provided by the light-emitting element that belongs to the present invention will now be described in detail by referring to Figs. 4 to 11. In this experimental example, the current was provided to a plurality of light-emitting elements with different electrode schemes, and the distribution of the current density of the light-emitting elements was observed. The differences in current density and direct voltage (Vf) of the various light-emitting elements from the current density distribution between the light-emitting elements were then compared.
    [00079] The current density distribution and the direct voltage (Vf) of the light-emitting elements were observed and analyzed by simulation software, using a finite element method. (a) in each of FIGS. 4-9 shows the arrangement of the light-emitting element electrodes used in the experiment, while (b) in each of Figs. 4 to 9 shows the result of observing the current density of the light-emitting elements.
    [00080] The bar to the right of Figures (b) in each of FIGS. 4 to 9 indicates the current density, which increases from bottom to top (as indicated by the darker shading). Comparative Example 1
    [00081] As shown in FIG. 4a, with the light-emitting element 300 belonging to comparative example 1, an outer connector 372 of the second electrode (second outer connector) has no third extended portion and fourth extended portion, and a fifth extended portion 378 extends in a manner linear from the second external connector 372, where the current tends to concentrate relatively easily, linearly towards the side of the external connector 352 of the first electrode (first external connector). Thus, as shown in FIG. 4b, the current ends flow up excessively between the first outer connector 352 and the second outer connector 372, and there is a decrease in the current density near the side faces of the semiconductor layer 330 on the side of the first outer connector 352. Therefore, with the shape and arrangement of the electrode shown in FIG. 4a, it can be seen that there is a big bias in the distribution of current density. Comparative Example 2
    [00082] As shown in FIG. 5a, with the light-emitting element 400 belonging to Comparative Example 2, the third extended portion 474 and a fourth extended portion 476 that extend from the outer connector 472 of the second electrode (second outer connector) do not extend along a first extended portion 454 and a second extended portion 456 extending from the outer connector 452 of a first electrode (first outer connector). Therefore, as shown in FIG. 5b, the current is concentrated on the side of the second external connector 472, and does not spread to the side of the first external connector 452, so there is a decrease in the current density around the corners of the semiconductor layer 430, and in particular on the side of the first external connector 452. Therefore, with the shape and arrangement of the electrode shown in FIG. 5a, it can be seen that there is a great polarization in the current density distribution. Comparative Example 3
    [00083] As shown in FIG. 6a, with the light-emitting element 500 that belongs to Comparative Example 3, a third extended portion 574 and a fourth extended portion 576 extending from the outer connector 572 of the second electrode (second outer connector) extend so as to respectively, opposite a first extended portion 554 and a second extended portion 556, which extend from the outer connector 552 of the first electrode (first outer connector). However, the distal end of a fifth extended portion 578 that extends linearly from the second outer connector 572 is arranged more to the side of the first outer connector 552 of a line L501 that connects a point on the first extended portion 554 in the most next to the second outer connector 552 (the distal end of the first extended portion), and a point on the second extended portion 556 in the position closest to the second outer connector 552 (the distal end of the second extended portion). Therefore, as shown in FIG. 6b, the current is excessively concentrated between the distal end of the fifth extended portion 578 and the first outer connector 552, the first extended portion 554, and the second extended portion 556 arranged so as to surround the distal end of the fifth extended portion 578. therefore, with the shape and arrangement of the electrode shown in FIG. 6a, it can be seen that there is a great polarization in the current density distribution. Working Example 1
    [00084] As shown in FIG. 7a, with the light-emitting element 600 belonging to Working Example 1, a third extended portion 674 and a fourth extended portion 676 extending from an external connector 672 of the second electrode (second external connector) extending so as to respectively, being opposed to a first extended portion 654 and a second extended portion 656, which extend from the outer connector 652 of the first electrode (first outer connector). In addition, the distal end of a fifth extended portion 678 that extends linearly from the second outer connector 672 is arranged over a line L601 that connects a point on the first extended portion 654 in the position closest to the second outer connector 672 (the end distal from the first extended portion), and a point on the second extended portion 656 in the position closest to the second outer connector 672 (the distal end of the second extended portion).
    [00085] Therefore, as shown in FIG. 7b, there is less excessive current concentration between the distal end of the fifth extended portion 678 and the region bounded by the first extended portion 654, the second extended portion 656, and the first outer connector 652, and a portion of the restricted current may spread between the first extended portion 654 and the third extended portion 674, and between the second extended portion 656 and the fourth extended portion 676. Therefore, with the shape and arrangement of the electrode shown in FIG. 7a, it can be seen that the current density distribution can be made more uniform, the emission of light evenly can be obtained. Working example 2
    [00086] As shown in FIG. 8a, the light-emitting element 700 that belongs to Example 2 has the same constitution as the light-emitting element 600 that belongs to Example 1 above, but the distal end of an extended fifth portion 778 is arranged more to the side of the second connector outer 772 as compared to the fifth extended portion 678 of the light-emitting element 600 that belongs to Working Example 1. That is, the distal end of the fifth extended portion 778 is arranged more on the side of the second outer connector 772 than a line L701 connecting a point on the first extended portion 754 in the position closest to the second outer connector 772 (the distal end of the first extended portion), and a point on the second extended portion 756 in the position closest to the second outer connector 772 (the end distal portion of the second extended portion).
    [00087] Therefore, as shown in FIG. 8b, there is even less excessive current concentration between the distal end of the extended extended portion 778 and the region bounded by the first extended portion 754, the second extended portion 756, and the first outer connector 752, and a portion of the restricted current may spread between the first extended portion 754 and the third extended portion 774, and between the second extended portion 756 and the fourth extended portion 776. Therefore, with the shape and arrangement of the electrode shown in FIG. 8a, it can be seen that the current density distribution can be made more uniform, the emission of light evenly can be obtained. The light-emitting element 700 that belongs to Working Example 2 is the same as the light-emitting element 100 that belongs to the first embodiment above. Working example 3
    [00088] As shown in FIG. 9a, the light-emitting element 800 that belongs to Example 3 has the same constitution as the light-emitting element 700 that belongs to Working Example 2 above, but the distal end of an extended fifth portion 878 is further arranged to the side of the second external connector 872 compared to the fifth extended portion 778 of the light-emitting element 700 which belongs to Example 2.
    [00089] Therefore, as shown in FIG. 9b, there is even less excessive current concentration between the distal end of the fifth extended portion 878 and the region bounded by the first extended portion 854, the second extended portion 856, and the first outer connector 852, and a portion of the restricted current may spread. between the first extended portion 854 and the third extended portion 874, and between the second extended portion 856 and the fourth extended portion 876. Therefore, with the shape and arrangement of the electrode shown in FIG. 9a, it can be seen that the current density distribution can be more uniform, the emission of light evenly can be obtained. Working Example 4
    [00090] As shown in FIG. 10a, with the light-emitting element belonging to Working Example 4, a first extended portion 954 and a second extended portion 956 extending from the outer connector 952 of the first electrode (first outer connector) extends substantially parallel to the side faces 937a, 937b, 938a, 938b and the semiconductor layer, and a third extended portion 974 and a fourth extended portion 976 extending from the outer connector 972 of the second electrode (second outer connector) extends beyond the first extended portion 954 and the second extended portion 956 substantially parallel to the first extended portion 954 and the second extended portion 956. In addition, the distal end of a fifth extended portion 978 that extends linearly from the second outer connector 972 is further arranged in the side of the second external connector 972 of an L901 line that connects a point on the first extended portion 954 in the position closest to the second connector outer 972 (the distal end of the first extended portion), and a point on the second extended portion 956 in the position closest to the second outer connector 972 (the distal end of the second extended portion).
    [00091] Therefore, as shown in FIG. 10b, there is less excessive current concentration between the distal end of the extended extended portion 978 and the region bounded by the first extended portion 954, the second extended portion 956, and the first outer connector 952, and a portion of the restricted current may spread between the first extended portion 954 and the third extended portion 974, and between the second extended portion 956 and the fourth extended portion 976. Therefore, with the shape and arrangement of the electrode shown in FIG. 10a, it can be seen that the current density distribution can be more uniform, the emission of light evenly can be obtained. The light-emitting element 900 that belongs to Working Example 4 is the same as the light-emitting element 200 that belongs to the second embodiment above.
    [00092] FIG. 11 shows the values of direct voltage (Vf) and the relative values of width for the distribution of current density in the light-emitting elements corresponding to Comparative Examples 1 to 3 and Working Examples 1 to 4. FIG. 11b is a graph that compares only the relative values for current density distribution width in Comparative Example 3 and Working Examples 1 to 4 shown in FIG. 11a.
    [00093] The "relative values" here are values that indicate the difference in the current density distribution of the various light-emitting elements, using Comparative Example 3 as a reference. The current density at the maximum frequency in a histogram of the current density distribution for the various light-emitting elements is used as a reference, the difference is calculated between the current density at this frequency is 5% of the maximum frequency on the long side than the reference, and the current density at this frequency is 5% of the maximum frequency on the lesser side than the reference, and the calculated value for each light emitting element is divided by the value for Comparative Example 3 to obtain a relative value. A comparison between these relative values makes it easy to say whether the difference in the current density distribution for each light emitting element is greater or less than in Comparative Example 3.
    [00094] In these working examples, as shown in FIG. 11, the relative values of the light-emitting elements 600, 700, 800 and 900 that belong to Working Examples 1 to 4 are lower than the relative value for the light-emitting element 500 that belongs to Comparative Example 3, which served as a reference, and of these, the value for the light-emitting elements 800 that belong to Work Example 3 is the lowest. The next lowest relative value was for the light-emitting element 700 which belongs to Work Example 2 and then for the light-emitting element 600 which belongs to Work Example 1. It can be seen that the light-emitting element 700 that belongs to Work Example 2 also had a Vf value that was kept relatively low.
    [00095] At the same time, the light-emitting elements 300 and 400 that belong to Comparative Examples 1 and 2 had relative values and Vf values that were much higher than those of the light-emitting elements 600, 700, 800 and 900 that belong to the Examples 1 to 4 and the light-emitting element 500 that belongs to comparison example 3, which served as a reference.
    [00096] Therefore, with the electrode shape and arrangement of the light-emitting elements 800 that belong to Working Example 3, the difference in current density in the semiconductor layer can be reduced to the maximum, and when the Vf value is also taken into account in consideration, it can be seen that the shape and arrangement of electrode 700 of the light-emitting elements belonging to Example 2 are the best.
    [00097] With the light-emitting element belonging to the present invention [1], as described above, a portion of the current flow that is concentrated between the first external connector and the second external connector can be distributed over the areas where the current tends to run out.
    [00098] The present application includes inventions [2] to [8]. [2] The light-emitting element of [1], in which the first extended portion and the second extended portion are eliminated in the form of arcs, which are concentric with the third extended portion and the fourth extended portion.
    [00099] Consequently, the current flowing between the first extended portion and the third extended portion, and between the second extended portion and the fourth extended portion can be made more uniform. [3] The light-emitting element, of [1] or [2], in which an order of a center of the concentric arcs, in a line L2 connecting the first extended portion and the third extended portion, a distance c1 from the center of the concentric arcs for the first extended portion is the same or greater than the distance d1 from the first extended portion to the third extended portion, and in order from the center of the concentric arcs, in a line L3 connected to the second extended portion and the fourth extended portion, a distance c2 from the center of the concentric arcs to the second extended portion is the same or greater than the distance d2 from the second extended portion to the fourth extended portion.
    [000100] Consequently, the current flow that tends to be concentrated between the first external connector and the second external connector and, in particular, near the center of the concentric arcs, can even more easily spread between the first extended portion and the third extended portion, and between the second extended portion and the extended portion. [4] The light-emitting element of any of [1] to [3], in which the semiconductor layer has a side semiconductor layer n, and a side semiconductor layer p that is laminated over the side semiconductor layer n, a first external connector is provided on the side semiconductor layer n, and a second external connector is provided on the side semiconductor layer p, respectively, a distance a1 from the second external connector to a point on the first portion extended in the position closest to the second external connector is greater than the distance b1 between the first external connector to a point on the third extended portion in the position closest to the first external connector, and a distance a2 from the second external connector to a point on the second extended portion in the position closest to the second external connector is greater than the distance between the first external connector b2 to a point in the fourth portion extended at the position closest to the first connector and internal.
    [000101] Consequently, the current flowing between the first extended portion or the second elongated portion and the second outer electrode connector p, where the current tends to be more concentrated in the peripheral region than in the first outer electrode connector n side , can more easily spread between the first external connector of the side electrode and the third extended portion or fourth extended portion. [5] The light-emitting element of any of [1] to [4], where the widths of the third extended portion and the fourth extended portion are such that the widths on the side of the second outer connector are greater than the width on the side of the distal end.
    [000102] Consequently, the third portion extended and the fourth portion extended, the foil resistance on the side of the second outer connector can be decreased, and the current can more easily spread to the side of the distal end. [6] The light-emitting element of any of [1] to [5], in which the first external connector is delimited by lines L4 that the connection point in the third extended portion, the point in the fourth extended portion, and the point on the fifth extended portion that are furthest from the second external connector.
    [000103] Therefore, the first external connector, in which the current flow tends to be relatively concentrated, is arranged in a region where the current tends to be lacking and the distance from the second external connector is more distant, and this compensates the lack of current. [7] The light-emitting element of any of [1] to [6], in which the semiconductor layer has a substantially rectangular shape in the top view, the second external connector is arranged in a corner of the semiconductor layer that has the substantially rectangular in shape, and has a sixth extended portion, which branches outwardly from the third extended portion and extends to a corner adjacent to the corner where the second outer connector is disposed, and a seventh extended portion that branches to the exterior from the fourth extended portion and extends to a corner adjacent to the corner where the second external connector is arranged.
    [000104] Therefore, the current can also be transmitted to the corner of the semiconductor layer where external connectors are located and are not arranged and where the current tends to be lacking. [8] The light-emitting element of any of [1] to [7], in which the semiconductor layer has a substantially rectangular shape in the top view, the first external connector and the second external connector are arranged opposite each other in the longitudinal direction of the semiconductor layer, the first extended portion and the second extended portion extending from the first outer connector are provided, so that their distal ends branch off.
    [000105] Therefore, the current can be uniformly distributed throughout the semiconductor layer, which has a substantially rectangular shape.
    [000106] While only selected embodiments and examples are chosen to illustrate the present invention, the foregoing descriptions of the embodiments according to the present invention are provided for illustration only and not for the purpose of limiting the invention as defined by the embodiments and their equivalent. It will be evident to those skilled in the art from this disclosure, that the various changes and modifications can be made here without departing from the scope of the invention as defined in the embodiments.
    [000107] The light-emitting element of the present invention can be used for general lighting, as well as for rear lights of liquid crystals, car headlights, signaling devices, large television sets, and various other types of sources of light.
    权利要求:
    Claims (11)
    [0001]
    1. Light-emitting element (100) comprising a first electrode (50) and a second electrode (70) provided in a semiconductor layer (30); the first electrode (50) has a first external connector (52) and a first extended portion (54) and a second extended portion (56) that extend from the first external connector (52), the second electrode (70) has a second external connector (72), and a third extended portion (74), a fourth extended portion (76), and a fifth extended portion (78) extending from the second external connector (72), the third extended portion (74) extends along the first extended portion (54) and further away than the first extended portion (54), the fourth extended portion (76) extends along the second extended portion (56) and further away than the second extended portion (56), and the fifth extended portion (78) extends an area between the third extended portion (74) and the fourth extended portion (76) to the first side of the outer connector, characterized by the fact that the distal end of the fifth extended portion (78) is either on a line connecting a point on the first extended portion (54) in the position closest to the second external connector (72) and a point in the second extended portion (56) in the position closest to the second external connector (72), or is closer to the side of the second external connector ( 72) than the line.
    [0002]
    2. Light-emitting element (100) according to claim 1, characterized by the fact that the first extended portion (54) and the second extended portion (56) are arranged in the form of arcs, which are concentric with the third extended portion (74) and the fourth extended portion (76).
    [0003]
    3. Light-emitting element (100), according to claim 2, characterized by the fact that in the order of a center of the concentric arcs, in a line L2 connecting the first extended portion (54) and the third extended portion (74 ), a distance c1 from the center of the concentric arcs to the first extended portion (54) is the same or greater than the distance d1 from the first extended portion (54) to the third extended portion (74), and at order from the center of the concentric arcs, on a line L3 connecting the second extended portion (56) and the fourth extended portion (76), a distance c2 from the center of the concentric arcs to the second extended portion (56) is the same or greater than the distance d2 from the second extended portion (56) to the fourth extended portion (76).
    [0004]
    Light-emitting element (100) according to any one of claims 1 to 3, characterized in that the semiconductor layer (30) has a side semiconductor layer n, and a side semiconductor layer p that is laminated over the side semiconductor layer n, a first outer connector (52) is provided over side semiconductor layer (30) n, and a second outer connector (72) is provided over side semiconductor layer (30) p, respectively, a distance a1 to from the second external connector (72) to a point on the first extended portion (54) in the position closest to the second external connector (72) is greater than the distance b1 between the first external connector (52) to a point on the third extended portion (74) in the position closest to the first external connector (52), and a distance a2 from the second external connector (72) to a point where the second extended portion (56) in the position closest to the second connector external (72) is more or than the distance b2 between the first external connector (52) to a point on the fourth extended portion (76) in the position closest to the first external connector (52).
    [0005]
    Light-emitting element (100) according to any one of claims 1 to 4, characterized in that the widths of the third extended portion (74) and the fourth extended portion (76) are such that the widths of the side of the second external connector (72) is greater than the widths on the side of the distal end.
    [0006]
    6. Light-emitting element (100) according to any one of claims 1 to 5, characterized by the fact that the first external connector (52) is delimited by lines L4 that connect the point in the third extended portion (74), the point on the fourth extended portion (76), and the point on the fifth extended portion (78) that are furthest from the second outer connector (72).
    [0007]
    7. Light-emitting element (100) according to any one of claims 1 to 6, characterized in that the semiconductor layer (30) has a rectangular shape in the top view, the second external connector (72) is arranged in a corner of the semiconductor layer (30) which is rectangular in shape, and has a sixth extended portion (80), which branches outwardly from the third extended portion (74) and extends to a corner adjacent to the corner where the second external connector (72) is arranged, and a seventh extended portion (82) that branches outwardly from the fourth extended portion (76) and extends to a corner adjacent to the corner where the second external connector ( 72) is willing.
    [0008]
    Light-emitting element (100) according to any one of claims 1, 2, 3 and 5, characterized by the fact that the semiconductor layer (30) has a rectangular shape in the top view, the first external connector ( 52) and the second external connector (72) are disposed opposite each other in the longitudinal direction of the semiconductor layer (30), the first extended portion (54) and the second extended portion (56) extending from the first external connector (52) are provided, so that their distal ends branch off.
    [0009]
    9. Light-emitting element (100) according to any one of claims 1 to 8, characterized by the fact that the first electrode (50) and the second electrode (70) include at least one of nickel, rhodium, chromium, gold, tungsten, platinum, titanium and aluminum.
    [0010]
    10. Light-emitting element (100) according to any one of claims 1 to 9, characterized in that the semiconductor layer (30) is made of semiconductor material based on gallium nitride.
    [0011]
    11. Light-emitting element (100) according to claim 10, characterized by the fact that the semiconductor layer (30) includes InxAlyGai-x-yN (0 <X, 0 <Y, X + Y <1).
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    法律状态:
    2018-12-26| B06F| Objections, documents and/or translations needed after an examination request according art. 34 industrial property law|
    2019-10-15| B06U| Preliminary requirement: requests with searches performed by other patent offices: suspension of the patent application procedure|
    2020-11-24| B09A| Decision: intention to grant|
    2021-02-02| B16A| Patent or certificate of addition of invention granted|Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 19/07/2011, OBSERVADAS AS CONDICOES LEGAIS. |
    优先权:
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    JP2010-192077|2010-08-30|
    PCT/JP2011/066312|WO2012011458A1|2010-07-23|2011-07-19|Light emitting element|
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